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Toshiba Semiconductor and Storage TPH1R712MD,L1Q

TPH1R712MD-L1Q Toshiba Semiconductor and Storage TPH1R712MD,L1Q
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 30A, 4.5V
edacadModel:
TPH1R712MD,L1Q Models
Gate Charge (Qg) (Max) @ Vgs:
182 nC @ 5 V
RoHS Status:
ROHS3 Compliant
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
edacadModelUrl:
/en/models/5323102
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
10900 pF @ 10 V
standardLeadTime:
32 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
8-SOP Advance (5x5)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPH1R712
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPH1R712MD,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.2v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 1.7mohm @ 30a, 4.5v. The maximum gate charge and given voltages include 182 nc @ 5 v. The product is rohs3 compliant. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 78w (tc). The product's input capacitance at maximum includes 10900 pf @ 10 v. It has a long 32 weeks standard lead time. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. 8-sop advance (5x5) is the supplier device package value. The continuous current drain at 25°C is 60a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tph1r712, a base product number of the product. The product is designated with the ear99 code number.

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You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TPH1R712MD,L1Q. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TPH1R712MD,L1Q.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11926002 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11926002.
Yes. We ship TPH1R712MD,L1Q Internationally to many countries around the world.