Automotive Standard:
No
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
200V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
84nC
Series:
STripFET
Maximum Gate Source Voltage Vgs:
±20 V
Forward Voltage Vf:
1.6V
Height:
4.6mm
Width:
10.4 mm
Length:
15.85mm
Package Type:
TO-263
Minimum Operating Temperature:
50°C
Maximum Drain Source Resistance Rds:
0.034Ω
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
75A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-50°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
34mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs:
84 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STB75NF20 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1578361
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
190W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3260 pF @ 25 V
Mounting Type:
Surface Mount
Series:
STripFET™
Supplier Device Package:
D2PAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB75
ECCN:
EAR99
