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Vishay Siliconix IRF730APBF

IRF730APBF Vishay Siliconix
IRF730APBF
IRF730APBF
ET11884326
Vishay Siliconix

Product Information

Category:
Power MOSFET
Dimensions:
10.52 x 4.7 x 15.85mm
Maximum Continuous Drain Current:
5.5 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
400 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
600 pF @ 25 V
Length:
10.52mm
Pin Count:
3
Forward Transconductance:
3.1S
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
74 W
Maximum Gate Source Voltage:
±30 V
Height:
15.85mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
1 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
1Ohm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
IRF730APBF Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/811845
Package:
Tube
Drain to Source Voltage (Vdss):
400 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 25 V
standardLeadTime:
10 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF730
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is IRF730APBF. It is of power mosfet category . The given dimensions of the product include 10.52 x 4.7 x 15.85mm. While 5.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 400 v drain source voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 600 pf @ 25 v . Its accurate length is 10.52mm. It contains 3 pins. The forward transconductance is 3.1s . Whereas, its typical turn-off delay time is about 20 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 74 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 15.85mm. In addition, it has a typical 10 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.6v . It provides up to 1 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 1ohm @ 3.3a, 10v. The maximum gate charge and given voltages include 22 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 400 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 74w (tc). The product's input capacitance at maximum includes 600 pf @ 25 v. It has a long 10 weeks standard lead time. to-220ab is the supplier device package value. The continuous current drain at 25°C is 5.5a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to irf730, a base product number of the product. The product is designated with the ear99 code number.

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IRF730A, SiHF730A, Power MOSFET(Technical Reference)
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Mult Dev Material Chg 30/Aug/2019(PCN Assembly/Origin)
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IRF730A, SiHF730A(Datasheets)
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Packaging Information(Datasheets)

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FAQs

Yes. You can also search IRF730APBF on website for other similar products.
We accept all major payment methods for all products including ET11884326. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with IRF730APBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix IRF730APBF. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix IRF730APBF.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11884326 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11884326.
Yes. We ship IRF730APBF Internationally to many countries around the world.