Forward Voltage Vf:
-1V
Width:
3.4 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
10.8nC
Package Type:
VSON
Maximum Continuous Drain Current Id:
104A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
150mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
20V
Channel Type:
Type P
Length:
3.4mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
96W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
12 V
Series:
NexFET
Height:
1.1mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 10A, 4.5V
title:
CSD25404Q3T
Vgs(th) (Max) @ Id:
1.15V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD25404Q3T Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/5764594
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.8W (Ta), 96W (Tc)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2120 pF @ 10 V
Mounting Type:
Surface Mount
Series:
NexFET™
Gate Charge (Qg) (Max) @ Vgs:
14.1 nC @ 4.5 V
Supplier Device Package:
8-VSONP (3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
104A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD25404
ECCN:
EAR99
