Texas Instruments CSD19536KTTT
Product Information
Maximum Continuous Drain Current:
272 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
118 nC @ 0 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
375 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
2.8 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs:
153 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD19536KTTT Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/5218158
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
2 (1 Year)
Power Dissipation (Max):
375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
12000 pF @ 50 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
TO-263 (DDPAK-3)
Current - Continuous Drain (Id) @ 25°C:
200A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19536
ECCN:
EAR99
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This is manufactured by Texas Instruments. The manufacturer part number is CSD19536KTTT. While 272 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 118 nc @ 0 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 375 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 2.8 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-4, d2pak (3 leads + tab), to-263aa. It has a maximum Rds On and voltage of 2.4mohm @ 100a, 10v. The maximum gate charge and given voltages include 153 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 2 (1 year). The product carries maximum power dissipation 375w (tc). The product's input capacitance at maximum includes 12000 pf @ 50 v. It has a long 12 weeks standard lead time. The product nexfet™, is a highly preferred choice for users. to-263 (ddpak-3) is the supplier device package value. The continuous current drain at 25°C is 200a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd19536, a base product number of the product. The product is designated with the ear99 code number.
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