STMicroelectronics STW36NM60ND
Product Information
Maximum Continuous Drain Current:
29 A
Transistor Material:
Si
Width:
5.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
80.4 nC @ 10 V
Channel Type:
N
Length:
15.75mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
190 W
Series:
FDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
20.15mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
110 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
110mOhm @ 14.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
80.4 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STW36NM60ND Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4250831
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
190W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2785 pF @ 50 V
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Grade:
Automotive
Series:
FDmesh™ II
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
29A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW36
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search STW36NM60ND on website for other similar products.
We accept all major payment methods for all products including ET11870163. Please check your shopping cart at the time of order.
You can order STMicroelectronics brand products with STW36NM60ND directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of STMicroelectronics STW36NM60ND. You can also check on our website or by contacting our customer support team for further order details on STMicroelectronics STW36NM60ND.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11870163 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "STMicroelectronics" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11870163.
Yes. We ship STW36NM60ND Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STW36NM60ND. While 29 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.15mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 80.4 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.75mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 190 w maximum power dissipation. The product fdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 20.15mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 110 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 110mohm @ 14.5a, 10v. The maximum gate charge and given voltages include 80.4 nc @ 10 v. The typical Vgs (th) (max) of the product is 5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 190w (tc). The product's input capacitance at maximum includes 2785 pf @ 50 v. The product is automotive, a grade of class. The product fdmesh™ ii, is a highly preferred choice for users. to-247-3 is the supplier device package value. The continuous current drain at 25°C is 29a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw36, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.