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Texas Instruments CSD18533KCS

CSD18533KCS Texas Instruments
CSD18533KCS
CSD18533KCS
Texas Instruments

Product Information

Category:
Power MOSFET
Dimensions:
10.67 x 4.7 x 16.51mm
Maximum Continuous Drain Current:
118 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
14 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2420 pF @ 30 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
13 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
192 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Typical Turn-On Delay Time:
5.7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
6.3mOhm @ 75A, 10V
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD18533KCS Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/3674877
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
192W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3025 pF @ 30 V
standardLeadTime:
6 Weeks
Mounting Type:
Through Hole
Series:
NexFET™
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
72A (Ta), 100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD18533
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by Texas Instruments. The manufacturer part number is CSD18533KCS. It is of power mosfet category . The given dimensions of the product include 10.67 x 4.7 x 16.51mm. While 118 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.3v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 14 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2420 pf @ 30 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 13 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 192 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.51mm. In addition, it has a typical 5.7 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 9 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 6.3mohm @ 75a, 10v. The maximum gate charge and given voltages include 34 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 192w (tc). The product's input capacitance at maximum includes 3025 pf @ 30 v. It has a long 6 weeks standard lead time. The product nexfet™, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 72a (ta), 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd18533, a base product number of the product. The product is designated with the ear99 code number.

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ESD Control Selection Guide V1(Technical Reference)
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Site Chg 04/Dec/2015(PCN Assembly/Origin)

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