Texas Instruments CSD13381F4T

Texas Instruments

Product Information

Maximum Drain Source Voltage:
12 V
Package Type:
PICOSTAR
Maximum Continuous Drain Current:
2.1 A
Mounting Type:
Surface Mount
Channel Type:
N
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Rds On (Max) @ Id, Vgs:
180mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
1.4 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD13381F4T Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/4862814
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
200 pF @ 6 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
FemtoFET™
Supplier Device Package:
3-PICOSTAR
Current - Continuous Drain (Id) @ 25°C:
2.1A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD13381F4
ECCN:
EAR99
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The Texas Instruments CSD13381F4T is a highly efficient N-Channel MOSFET from the innovative FemtoFET™ series, designed for demanding low-voltage power management applications. This single-transistor, surface-mount component boasts a maximum Drain-Source Voltage of 12V and a continuous drain current of 2.1A. Its extremely compact PICOSTAR packaging minimises board space, making it ideal for portable electronics and space-constrained designs where high-performance switching is critical for system efficiency.

The Top Reasons to Use the Texas Instruments CSD13381F4T MOSFET

This MOSFET is essential for designs requiring high power density and ultra-small footprint, thanks to its FemtoFET™ PICOSTAR package. It offers low on-resistance (Rds On) for minimal power loss and a wide operating temperature range (-55°C to 150°C), ensuring robust, energy-efficient switching performance in portable consumer and industrial electronics.

Core Performance Features & Key Uses of the CSD13381F4T MOSFET

  • FET Type: N-Channel Metal-Oxide-Semiconductor FET (MOSFET) Technology.
  • Voltage Rating (Vdss): 12 V Maximum Drain Source Voltage.
  • Current Rating (Id): 2.1 A Continuous Drain Current (@ 25°C).
  • Resistance: Low maximum Rds On of 180 mOhm.
  • Package: Ultra-small PICOSTAR/3-XFDFN surface mount package.
  • Key Uses: Load switches, level shifters, and high-efficiency power management circuits in miniature or battery-powered devices.

pdf icon
Assembly/Test Site Transfer 19/Dec/2014(PCN Assembly/Origin)
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DSBGA/Usip 14/Sep/2016(PCN Design/Specification)
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CSDx 15/Mar/2022(PCN Design/Specification)
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Carrier Tape 28/Aug/2018(PCN Packaging)

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