Maximum Drain Source Voltage:
710 V
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
110 W
Series:
MDmesh M5
Maximum Gate Source Voltage:
-25 V, +25 V
Maximum Gate Threshold Voltage:
5V
Height:
2.4mm
Width:
6.2mm
Length:
6.6mm
Minimum Gate Threshold Voltage:
3V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
15 A
Transistor Material:
Si
Maximum Drain Source Resistance:
220 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
38 Weeks
Detailed Description:
N-Channel 650V 15A (Tc) 110W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
STD18
Gate Charge (Qg) (Max) @ Vgs:
31nC @ 10V
Rds On (Max) @ Id, Vgs:
220mOhm @ 7.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1240pF @ 100V
Mounting Type:
Surface Mount
Series:
MDmesh™ V
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Customer Reference:
Power Dissipation (Max):
110W (Tc)
Technology:
MOSFET (Metal Oxide)
