Microchip Technology DN3135N8-G
Product Information
FET Feature:
Depletion Mode
Base Part Number:
DN3135
Detailed Description:
N-Channel 350V 135mA (Tj) 1.3W (Ta) Surface Mount TO-243AA (SOT-89)
Input Capacitance (Ciss) (Max) @ Vds:
120pF @ 25V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
35Ohm @ 150mA, 0V
Drain to Source Voltage (Vdss):
350V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
0V
Supplier Device Package:
TO-243AA (SOT-89)
Manufacturer Standard Lead Time:
42 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-243AA
Power Dissipation (Max):
1.3W (Ta)
Current - Continuous Drain (Id) @ 25°C:
135mA (Tj)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microchip Technology
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Yes. We ship DN3135N8-G Internationally to many countries around the world.
This is manufactured by Microchip Technology. The manufacturer part number is DN3135N8-G. The FET features of the product include depletion mode. Base Part Number: dn3135. It features n-channel 350v 135ma (tj) 1.3w (ta) surface mount to-243aa (sot-89). The product's input capacitance at maximum includes 120pf @ 25v. The product is available in surface mount configuration. It has a maximum Rds On and voltage of 35ohm @ 150ma, 0v. The product has a 350v drain to source voltage. The maximum Vgs rate is ±20v. The drive voltage (maximum and minimum Rds On) of the product includes 0v. to-243aa (sot-89) is the supplier device package value. It has typical 42 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-243aa. The product carries maximum power dissipation 1.3w (ta). The continuous current drain at 25°C is 135ma (tj). This product use mosfet (metal oxide) technology. The microchip technology's product offers user-desired applications.
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