Vishay Siliconix SI1403CDL-T1-GE3
Product Information
Detailed Description:
P-Channel 20V 2.1A (Tc) 600mW (Ta), 900mW (Tc) Surface Mount SC-70-6 (SOT-363)
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Base Part Number:
SI1403
Gate Charge (Qg) (Max) @ Vgs:
8nC @ 4.5V
Rds On (Max) @ Id, Vgs:
140mOhm @ 1.6A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
281pF @ 10V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SC-70-6 (SOT-363)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.1A (Tc)
Customer Reference:
Power Dissipation (Max):
600mW (Ta), 900mW (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship SI1403CDL-T1-GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SI1403CDL-T1-GE3. It features p-channel 20v 2.1a (tc) 600mw (ta), 900mw (tc) surface mount sc-70-6 (sot-363). The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. Base Part Number: si1403. The maximum gate charge and given voltages include 8nc @ 4.5v. It has a maximum Rds On and voltage of 140mohm @ 1.6a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 281pf @ 10v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. sc-70-6 (sot-363) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.1a (tc). The product carries maximum power dissipation 600mw (ta), 900mw (tc). This product use mosfet (metal oxide) technology.
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