Maximum Drain Source Voltage:
250 V
Typical Gate Charge @ Vgs:
7.04 @ 1.5 V
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Gate Source Voltage:
20 V
Series:
DN2625
Height:
2.29mm
Width:
6.1mm
Length:
6.6mm
Maximum Drain Source Resistance:
3.5 Ω
Package Type:
TO-252
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.1 A
Forward Diode Voltage:
1.8V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
FET Feature:
Depletion Mode
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 1A, 0V
Gate Charge (Qg) (Max) @ Vgs:
7.04 nC @ 1.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
DN2625K4-G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
0V
edacadModelUrl:
/en/models/4902753
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
1000 pF @ 25 V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252 (DPAK)
Current - Continuous Drain (Id) @ 25°C:
1.1A (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DN2625
ECCN:
EAR99
