Forward Voltage Vf:
1.1V
Width:
6.35 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
25nC
Package Type:
PowerFLAT
Maximum Continuous Drain Current Id:
60A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
16.5mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
100V
Channel Type:
Type N
Length:
5.4mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
5W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
STripFET H7
Height:
0.95mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
18mOhm @ 6A, 10V
title:
STL60N10F7
Vgs(th) (Max) @ Id:
4.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STL60N10F7 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4250814
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta), 72W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1640 pF @ 50 V
Mounting Type:
Surface Mount
Series:
DeepGATE™, STripFET™ VII
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Supplier Device Package:
PowerFlat™ (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL60
ECCN:
EAR99
