Category:
Power MOSFET
Dimensions:
16.05 x 14 x 5.1mm
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
14mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
100 mΩ
Package Type:
TO-268
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
96 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6250 pF @ 25 V
Length:
16.05mm
Pin Count:
3
Typical Turn-Off Delay Time:
37 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.04 kW
Series:
HiperFET, Polar3
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.1mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Rds On (Max) @ Id, Vgs:
100mOhm @ 30A, 10V
title:
IXFT60N50P3
Vgs(th) (Max) @ Id:
5V @ 4mA
REACH Status:
REACH Unaffected
edacadModel:
IXFT60N50P3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2650883
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1040W (Tc)
standardLeadTime:
44 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
6250 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, Polar3™
Gate Charge (Qg) (Max) @ Vgs:
96 nC @ 10 V
Supplier Device Package:
TO-268AA
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFT60
ECCN:
EAR99
