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Vishay Siliconix SIA817EDJ-T1-GE3

SIA817EDJ-T1-GE3 Vishay Siliconix
SIA817EDJ-T1-GE3
Vishay Siliconix

Product Information

FET Feature:
Schottky Diode (Isolated)
Detailed Description:
P-Channel 30V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id:
1.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SC-70-6 Dual
Base Part Number:
SIA817
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 10V
Rds On (Max) @ Id, Vgs:
65mOhm @ 3A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
600pF @ 15V
Mounting Type:
Surface Mount
Series:
LITTLE FOOT®
Supplier Device Package:
PowerPAK® SC-70-6 Dual
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Customer Reference:
Power Dissipation (Max):
1.9W (Ta), 6.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIA817EDJ-T1-GE3. The FET features of the product include schottky diode (isolated). It features p-channel 30v 4.5a (tc) 1.9w (ta), 6.5w (tc) surface mount powerpak® sc-70-6 dual. The typical Vgs (th) (max) of the product is 1.3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® sc-70-6 dual. Base Part Number: sia817. The maximum gate charge and given voltages include 23nc @ 10v. It has a maximum Rds On and voltage of 65mohm @ 3a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 600pf @ 15v. The product is available in surface mount configuration. The product little foot®, is a highly preferred choice for users. powerpak® sc-70-6 dual is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4.5a (tc). The product carries maximum power dissipation 1.9w (ta), 6.5w (tc). This product use mosfet (metal oxide) technology.

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Wafer Fab Addition 22/Jun/2015(PCN Assembly/Origin)
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SIA817EDJ(Datasheets)
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SIL-001-2015-Rev-0 21/Jan/2015(PCN Design/Specification)

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FAQs

Yes. You can also search SIA817EDJ-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET11708910. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIA817EDJ-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIA817EDJ-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIA817EDJ-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11708910 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11708910.
Yes. We ship SIA817EDJ-T1-GE3 Internationally to many countries around the world.