IXYS IXFH34N65X2
Product Information
Maximum Continuous Drain Current:
34 A
Transistor Material:
Si
Width:
21.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
56 nC @ 10 V
Channel Type:
N
Length:
16.24mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
540 W
Series:
HiperFET, X2-Class
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
100 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.5V @ 2.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
105mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
540W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3330 pF @ 25 V
standardLeadTime:
47 Weeks
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
TO-247 (IXTH)
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH34
ECCN:
EAR99
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FAQs
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You can order IXYS brand products with IXFH34N65X2 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFH34N65X2. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFH34N65X2.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11682653 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11682653.
Yes. We ship IXFH34N65X2 Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFH34N65X2. While 34 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 21.45mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 56 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.24mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 540 w maximum power dissipation. The product hiperfet, x2-class, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 5.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 100 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.5v @ 2.5ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 105mohm @ 17a, 10v. The maximum gate charge and given voltages include 56 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 540w (tc). The product's input capacitance at maximum includes 3330 pf @ 25 v. It has a long 47 weeks standard lead time. The product hiperfet™, ultra x2, is a highly preferred choice for users. to-247 (ixth) is the supplier device package value. The continuous current drain at 25°C is 34a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfh34, a base product number of the product. The product is designated with the ear99 code number.
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