Vishay Siliconix SIHB21N60EF-GE3
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
176mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs:
84 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2030 pF @ 100 V
standardLeadTime:
21 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHB21
ECCN:
EAR99
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FAQs
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You can order Vishay Siliconix brand products with SIHB21N60EF-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIHB21N60EF-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIHB21N60EF-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11666576 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11666576.
Yes. We ship SIHB21N60EF-GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SIHB21N60EF-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 176mohm @ 11a, 10v. The maximum gate charge and given voltages include 84 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 227w (tc). The product's input capacitance at maximum includes 2030 pf @ 100 v. It has a long 21 weeks standard lead time. The product is available in surface mount configuration. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 21a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sihb21, a base product number of the product. The product is designated with the ear99 code number.
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