Texas Instruments CSD17579Q3AT
Product Information
Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Width:
3.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
VSCONP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.3 nC @ 4.5 V
Channel Type:
N
Length:
3.5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.2 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
14.2 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.9V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
10.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD17579Q3AT Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/5022210
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.2W (Ta), 29W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
998 pF @ 15 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (3x3.3)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD17579
ECCN:
EAR99
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This is manufactured by Texas Instruments. The manufacturer part number is CSD17579Q3AT. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.5mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of vsconp. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.3 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 3.2 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.9mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 14.2 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.9v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 10.2mohm @ 8a, 10v. The maximum gate charge and given voltages include 15 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.2w (ta), 29w (tc). The product's input capacitance at maximum includes 998 pf @ 15 v. It has a long 6 weeks standard lead time. The product nexfet™, is a highly preferred choice for users. 8-vsonp (3x3.3) is the supplier device package value. The continuous current drain at 25°C is 20a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd17579, a base product number of the product. The product is designated with the ear99 code number.
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