Forward Voltage Vf:
1.6V
Width:
10.4 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
27nC
Package Type:
TO-263
Maximum Continuous Drain Current Id:
55A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
20mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type N
Length:
10.75mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
95W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
16 V
Series:
STripFET II
Height:
4.6mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
18mOhm @ 27.5A, 10V
title:
STB55NF06LT4
Vgs(th) (Max) @ Id:
4.7V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STB55NF06LT4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V, 5V
edacadModelUrl:
/en/models/1039320
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
95W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 25 V
Mounting Type:
Surface Mount
Series:
STripFET™ II
Gate Charge (Qg) (Max) @ Vgs:
37 nC @ 4.5 V
Supplier Device Package:
D2PAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB55
ECCN:
EAR99
