Texas Instruments CSD25310Q2
Product Information
Maximum Drain Source Voltage:
20 V
Maximum Continuous Drain Current:
20 A
Channel Mode:
Enhancement
Series:
NexFET
Channel Type:
P
Maximum Gate Threshold Voltage:
0.55V
Maximum Drain Source Resistance:
2390000 Ω
Package Type:
WSON
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
6
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
23.9mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
4.7 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD25310Q2 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/4701489
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.9W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
655 pF @ 10 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
6-WSON (2x2)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD25310
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship CSD25310Q2 Internationally to many countries around the world.
This is manufactured by Texas Instruments. The manufacturer part number is CSD25310Q2. It has a maximum of 20 v drain source voltage. While 20 a of maximum continuous drain current. The product carries enhancement channel mode. The product nexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 0.55v of maximum gate threshold voltage. It provides up to 2390000 ω maximum drain source resistance. The package is a sort of wson. It consists of 1 elements per chip. The transistor is manufactured from highly durable si material. It contains 6 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. It has a maximum Rds On and voltage of 23.9mohm @ 5a, 4.5v. The maximum gate charge and given voltages include 4.7 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.9w (ta). The product's input capacitance at maximum includes 655 pf @ 10 v. It has a long 6 weeks standard lead time. The product is available in surface mount configuration. The product nexfet™, is a highly preferred choice for users. 6-wson (2x2) is the supplier device package value. The continuous current drain at 25°C is 20a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd25310, a base product number of the product. The product is designated with the ear99 code number.
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