Maximum Power Dissipation Pd:
110W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
650V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
-25/25 V
Series:
MDmesh M2
Forward Voltage Vf:
1.6V
Height:
15.75mm
Width:
4.6 mm
Length:
10.4mm
Package Type:
TO-220
Number of Elements per Chip:
1
Transistor Configuration:
Single
Maximum Continuous Drain Current Id:
12A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
330mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STP18N65M2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5244930
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
770 pF @ 100 V
standardLeadTime:
16 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™ M2
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP18
ECCN:
EAR99
