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Vishay Siliconix SI3477DV-T1-GE3

SI3477DV-T1-GE3 Vishay Siliconix
SI3477DV-T1-GE3
Vishay Siliconix

Product Information

Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
SI3477
Gate Charge (Qg) (Max) @ Vgs:
90nC @ 10V
Rds On (Max) @ Id, Vgs:
17.5mOhm @ 9A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 6V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Customer Reference:
Power Dissipation (Max):
2W (Ta), 4.2W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SI3477DV-T1-GE3. It has typical 8 weeks of manufacturer standard lead time. It features p-channel 12v 8a (tc) 2w (ta), 4.2w (tc) surface mount 6-tsop. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: si3477. The maximum gate charge and given voltages include 90nc @ 10v. It has a maximum Rds On and voltage of 17.5mohm @ 9a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The vishay siliconix's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is ±10v. The product's input capacitance at maximum includes 2600pf @ 6v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-tsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 8a (tc). The product carries maximum power dissipation 2w (ta), 4.2w (tc). This product use mosfet (metal oxide) technology.

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Wafer Fab Addition 22/Jun/2015(PCN Assembly/Origin)
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SI3477DV(Datasheets)

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FAQs

Yes. You can also search SI3477DV-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET11588696. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SI3477DV-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SI3477DV-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SI3477DV-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11588696 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11588696.
Yes. We ship SI3477DV-T1-GE3 Internationally to many countries around the world.