Maximum Power Dissipation Pd:
1.9W
Maximum Drain Source Voltage Vds:
30V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Drain Source Resistance Rds:
12.9mΩ
Forward Voltage Vf:
1.2V
Channel Type:
Type N
Package Type:
PICOSTAR
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
2.3A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Automotive Standard:
AEC-Q101
Mount Type:
Surface
Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Base Part Number:
CSD17382
Gate Charge (Qg) (Max) @ Vgs:
2.7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
64mOhm @ 500mA, 8V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 8V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
10V
Input Capacitance (Ciss) (Max) @ Vds:
347pF @ 15V
Mounting Type:
Surface Mount
Series:
FemtoFET™
Supplier Device Package:
3-PICOSTAR
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.3A (Ta)
Customer Reference:
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
