IXYS IXFP4N60P3
Product Information
Category:
Power MOSFET
Dimensions:
10.66 x 4.83 x 16mm
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.9 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
365 pF @ 25 V
Length:
10.66mm
Pin Count:
3
Typical Turn-Off Delay Time:
24 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
114 W
Series:
HiperFET, Polar3
Maximum Gate Source Voltage:
±30 V
Height:
16mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.2 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
2.2Ohm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
6.9 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
365 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar3™
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFP4N60
ECCN:
EAR99
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FAQs
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You can order IXYS brand products with IXFP4N60P3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFP4N60P3. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFP4N60P3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11556337 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11556337.
Yes. We ship IXFP4N60P3 Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFP4N60P3. It is of power mosfet category . The given dimensions of the product include 10.66 x 4.83 x 16mm. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 365 pf @ 25 v . Its accurate length is 10.66mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 24 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 114 w maximum power dissipation. The product hiperfet, polar3, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 16mm. In addition, it has a typical 15 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 2.2 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 2.2ohm @ 2a, 10v. The maximum gate charge and given voltages include 6.9 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 114w (tc). The product's input capacitance at maximum includes 365 pf @ 25 v. The product hiperfet™, polar3™, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfp4n60, a base product number of the product. The product is designated with the ear99 code number.
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