Forward Voltage Vf:
0.8V
Width:
2 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
2nC
Package Type:
SON
Maximum Continuous Drain Current Id:
5A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
34mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
25V
Channel Type:
Type N
Length:
2mm
Standards/Approvals:
No
Pin Count:
6
Mount Type:
Surface
Maximum Power Dissipation Pd:
2.3W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
10 V
Series:
NexFET
Height:
0.8mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.55V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-SMD, Flat Leads
Rds On (Max) @ Id, Vgs:
24mOhm @ 4A, 8V
Gate Charge (Qg) (Max) @ Vgs:
2.8 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD16301Q2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
3V, 8V
edacadModelUrl:
/en/models/2175533
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
+10V, -8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
340 pF @ 12.5 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
6-SON
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD16301
ECCN:
EAR99
