Maximum Continuous Drain Current:
32 A
Transistor Material:
Si
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1000 V
Maximum Gate Threshold Voltage:
6.5V
Package Type:
PLUS247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
195 nC @ 10 V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
1.25 kW
Series:
HiperFET, Q3-Class
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
21.34mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
320 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Rds On (Max) @ Id, Vgs:
320mOhm @ 16A, 10V
title:
IXFX32N100Q3
Vgs(th) (Max) @ Id:
6.5V @ 8mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1250W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
9940 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Q3 Class
Gate Charge (Qg) (Max) @ Vgs:
195 nC @ 10 V
Supplier Device Package:
PLUS247™-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
32A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFX32
ECCN:
EAR99
