Automotive Standard:
No
Maximum Power Dissipation Pd:
1.25kW
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
1kV
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
195nC
Maximum Drain Source Resistance Rds:
320mΩ
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.4V
Height:
21.34mm
Width:
5.21 mm
Length:
16.13mm
Package Type:
PLUS247
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
32A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Rds On (Max) @ Id, Vgs:
320mOhm @ 16A, 10V
title:
IXFX32N100Q3
Vgs(th) (Max) @ Id:
6.5V @ 8mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1250W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
9940 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Q3 Class
Gate Charge (Qg) (Max) @ Vgs:
195 nC @ 10 V
Supplier Device Package:
PLUS247™-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
32A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFX32
ECCN:
EAR99
