IXYS IXFB70N60Q2
Product Information
Category:
Power MOSFET
Dimensions:
20.29 x 5.31 x 26.59mm
Maximum Continuous Drain Current:
70 A
Transistor Material:
Si
Width:
5.31mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5.5V
Maximum Drain Source Resistance:
80 mΩ
Package Type:
PLUS264
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
265 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7200 pF @ 25 V
Length:
20.29mm
Pin Count:
3
Typical Turn-Off Delay Time:
60 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
890 W
Series:
HiperFET, Q-Class
Maximum Gate Source Voltage:
±30 V
Height:
26.59mm
Typical Turn-On Delay Time:
26 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Rds On (Max) @ Id, Vgs:
88mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs:
265 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
890W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
12000 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Q2 Class
Supplier Device Package:
PLUS264™
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFB70
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search IXFB70N60Q2 on website for other similar products.
We accept all major payment methods for all products including ET11463841. Please check your shopping cart at the time of order.
You can order IXYS brand products with IXFB70N60Q2 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFB70N60Q2. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFB70N60Q2.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11463841 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11463841.
Yes. We ship IXFB70N60Q2 Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFB70N60Q2. It is of power mosfet category . The given dimensions of the product include 20.29 x 5.31 x 26.59mm. While 70 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.31mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5.5v of maximum gate threshold voltage. It provides up to 80 mω maximum drain source resistance. The package is a sort of plus264. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 265 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 7200 pf @ 25 v . Its accurate length is 20.29mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 60 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 890 w maximum power dissipation. The product hiperfet, q-class, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 26.59mm. In addition, it has a typical 26 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.5v @ 8ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-264-3, to-264aa. It has a maximum Rds On and voltage of 88mohm @ 35a, 10v. The maximum gate charge and given voltages include 265 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 890w (tc). The product's input capacitance at maximum includes 12000 pf @ 25 v. The product hiperfet™, q2 class, is a highly preferred choice for users. plus264™ is the supplier device package value. The continuous current drain at 25°C is 70a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfb70, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.