Automotive Standard:
No
Maximum Power Dissipation Pd:
45W
Maximum Drain Source Voltage Vds:
800V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Series:
SuperMESH
Forward Voltage Vf:
1.6V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
7.7nC
Package Type:
TO-252
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
16Ω
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
1A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
16Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
7.7 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STD1NK80ZT4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/954055
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
160 pF @ 25 V
standardLeadTime:
13 Weeks
Mounting Type:
Surface Mount
Series:
SuperMESH™
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
1A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD1NK80
ECCN:
EAR99
