Vishay Siliconix SIR422DP-T1-GE3
Product Information
Category:
Power MOSFET
Dimensions:
5.99 x 5 x 1.07mm
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Package Type:
PowerPAK SO
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1785 pF @ 20 V
Length:
5.99mm
Pin Count:
8
Forward Transconductance:
70S
Typical Turn-Off Delay Time:
28 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
34.7 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1.07mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
8 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs:
6.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
edacadModel:
SIR422DP-T1-GE3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/2622927
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta), 34.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1785 pF @ 20 V
standardLeadTime:
18 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIR422
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIR422DP-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIR422DP-T1-GE3.
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Yes. We ship SIR422DP-T1-GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SIR422DP-T1-GE3. It is of power mosfet category . The given dimensions of the product include 5.99 x 5 x 1.07mm. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The package is a sort of powerpak so. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 32 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1785 pf @ 20 v . Its accurate length is 5.99mm. It contains 8 pins. The forward transconductance is 70s . Whereas, its typical turn-off delay time is about 28 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 34.7 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.07mm. In addition, it has a typical 19 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 8 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. It has a maximum Rds On and voltage of 6.6mohm @ 20a, 10v. The maximum gate charge and given voltages include 48 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5w (ta), 34.7w (tc). The product's input capacitance at maximum includes 1785 pf @ 20 v. It has a long 18 weeks standard lead time. The product trenchfet®, is a highly preferred choice for users. powerpak® so-8 is the supplier device package value. The continuous current drain at 25°C is 40a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sir422, a base product number of the product. The product is designated with the ear99 code number.
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