Category:
Power MOSFET
Dimensions:
5.99 x 5 x 1.07mm
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Package Type:
PowerPAK SO
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1785 pF @ 20 V
Length:
5.99mm
Pin Count:
8
Forward Transconductance:
70S
Typical Turn-Off Delay Time:
28 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
34.7 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1.07mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
8 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs:
6.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
edacadModel:
SIR422DP-T1-GE3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/2622927
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta), 34.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1785 pF @ 20 V
standardLeadTime:
18 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIR422
ECCN:
EAR99
