Automotive Standard:
No
Maximum Power Dissipation Pd:
250W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
100V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
117nC
Maximum Drain Source Resistance Rds:
3.9mΩ
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Height:
4.8mm
Width:
10.57 mm
Length:
10.4mm
Package Type:
H2PAK
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
110A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
3
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
3.9mOhm @ 55A, 10V
Gate Charge (Qg) (Max) @ Vgs:
117 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STH150N10F7-2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5018865
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
8115 pF @ 50 V
standardLeadTime:
39 Weeks
Mounting Type:
Surface Mount
Series:
DeepGATE™, STripFET™ VII
Supplier Device Package:
H2PAK-2
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STH150
ECCN:
EAR99
