Texas Instruments CSD23203WT
Product Information
Category:
Power MOSFET
Dimensions:
1 x 1.49 x 0.28mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
1.49mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
8 V
Package Type:
DSBGA
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.9 nC @ 4 V
Channel Type:
P
Typical Input Capacitance @ Vds:
703 pF @ -4 V
Length:
1mm
Pin Count:
6
Forward Transconductance:
14S
Typical Turn-Off Delay Time:
58 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.75 W
Series:
NexFET
Maximum Gate Source Voltage:
-6 V
Height:
0.28mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
53 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFBGA, DSBGA
Rds On (Max) @ Id, Vgs:
19.4mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
6.3 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD23203WT Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/5051701
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
8 V
Vgs (Max):
-6V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
914 pF @ 4 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
6-DSBGA (1x1.5)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD23203
ECCN:
EAR99
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This is manufactured by Texas Instruments. The manufacturer part number is CSD23203WT. It is of power mosfet category . The given dimensions of the product include 1 x 1.49 x 0.28mm. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.49mm wide. The product offers single transistor configuration. It has a maximum of 8 v drain source voltage. The package is a sort of dsbga. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.9 nc @ 4 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 703 pf @ -4 v . Its accurate length is 1mm. It contains 6 pins. The forward transconductance is 14s . Whereas, its typical turn-off delay time is about 58 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.75 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -6 v. In addition, the height is 0.28mm. In addition, it has a typical 14 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 53 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufbga, dsbga. It has a maximum Rds On and voltage of 19.4mohm @ 1.5a, 4.5v. The maximum gate charge and given voltages include 6.3 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 8 v drain to source voltage. The maximum Vgs rate is -6v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 750mw (ta). The product's input capacitance at maximum includes 914 pf @ 4 v. It has a long 12 weeks standard lead time. The product nexfet™, is a highly preferred choice for users. 6-dsbga (1x1.5) is the supplier device package value. The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd23203, a base product number of the product. The product is designated with the ear99 code number.
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