Vishay Siliconix SI2312BDS-T1-GE3
Product Information
Base Part Number:
SI2312
Detailed Description:
N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
850mV @ 250µA
Series:
TrenchFET®
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 4.5V
Rds On (Max) @ Id, Vgs:
31mOhm @ 5A, 4.5V
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
750mW (Ta)
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
3.9A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Vishay Siliconix
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You can order Vishay Siliconix brand products with SI2312BDS-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SI2312BDS-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SI2312BDS-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11392013 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11392013.
Yes. We ship SI2312BDS-T1-GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SI2312BDS-T1-GE3. Base Part Number: si2312. It features n-channel 20v 3.9a (ta) 750mw (ta) surface mount sot-23-3 (to-236). The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 850mv @ 250µa. The product trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 12nc @ 4.5v. It has a maximum Rds On and voltage of 31mohm @ 5a, 4.5v. sot-23-3 (to-236) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 750mw (ta). The product has a 20v drain to source voltage. The continuous current drain at 25°C is 3.9a (ta). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.
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