Forward Voltage Vf:
1.4V
Width:
21.34 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
152nC
Package Type:
ISOPLUS247
Maximum Continuous Drain Current Id:
54A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
33mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
650V
Channel Type:
Type N
Length:
16.13mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
330W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Series:
X2-Class
Height:
5.21mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
33mOhm @ 51A, 10V
Gate Charge (Qg) (Max) @ Vgs:
152 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
IXTR102N65X2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5423785
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
330W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
10900 pF @ 25 V
standardLeadTime:
47 Weeks
Mounting Type:
Through Hole
Series:
Ultra X2
Supplier Device Package:
ISOPLUS247™
Current - Continuous Drain (Id) @ 25°C:
54A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTR102
ECCN:
EAR99
