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Vishay Siliconix IRFZ20PBF

IRFZ20PBF Vishay Siliconix
IRFZ20PBF
IRFZ20PBF
ET11298383
Vishay Siliconix

Product Information

Category:
Power MOSFET
Dimensions:
10.52 x 4.7 x 15.85mm
Maximum Continuous Drain Current:
15 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
50 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
560 pF @ 25 V
Length:
10.52mm
Pin Count:
3
Forward Transconductance:
6S
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
±20 V
Height:
15.85mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
100 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
100mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
IRFZ20PBF Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/811838
Package:
Tube
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
850 pF @ 25 V
standardLeadTime:
10 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFZ20
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is IRFZ20PBF. It is of power mosfet category . The given dimensions of the product include 10.52 x 4.7 x 15.85mm. While 15 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 50 v drain source voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 560 pf @ 25 v . Its accurate length is 10.52mm. It contains 3 pins. The forward transconductance is 6s . Whereas, its typical turn-off delay time is about 20 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 40 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 15.85mm. In addition, it has a typical 15 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 100 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 100mohm @ 10a, 10v. The maximum gate charge and given voltages include 17 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 50 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 40w (tc). The product's input capacitance at maximum includes 850 pf @ 25 v. It has a long 10 weeks standard lead time. to-220ab is the supplier device package value. The continuous current drain at 25°C is 15a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to irfz20, a base product number of the product. The product is designated with the ear99 code number.

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IRFZ20, SiHFZ20, Power MOSFET(Technical Reference)
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Mult Dev Material Chg 30/Aug/2019(PCN Assembly/Origin)
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Packaging Information(Datasheets)

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FAQs

Yes. You can also search IRFZ20PBF on website for other similar products.
We accept all major payment methods for all products including ET11298383. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with IRFZ20PBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix IRFZ20PBF. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix IRFZ20PBF.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11298383 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11298383.
Yes. We ship IRFZ20PBF Internationally to many countries around the world.