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IXYS IXFH42N60P3

IXFH42N60P3 IXYS
IXFH42N60P3
IXFH42N60P3
IXYS

Product Information

Category:
Power MOSFET
Dimensions:
16.26 x 5.3 x 21.46mm
Maximum Continuous Drain Current:
42 A
Transistor Material:
Si
Width:
5.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
78 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5150 pF @ 25 V
Length:
16.26mm
Pin Count:
3
Typical Turn-Off Delay Time:
60 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
830 W
Series:
HiperFET, Polar3
Maximum Gate Source Voltage:
±30 V
Height:
21.46mm
Typical Turn-On Delay Time:
32 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
185 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
185mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
78 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
830W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5150 pF @ 25 V
standardLeadTime:
59 Weeks
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar3™
Supplier Device Package:
TO-247AD (IXFH)
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH42
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by IXYS. The manufacturer part number is IXFH42N60P3. It is of power mosfet category . The given dimensions of the product include 16.26 x 5.3 x 21.46mm. While 42 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.3mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 78 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5150 pf @ 25 v . Its accurate length is 16.26mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 60 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 830 w maximum power dissipation. The product hiperfet, polar3, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 21.46mm. In addition, it has a typical 32 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 185 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 4ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 185mohm @ 500ma, 10v. The maximum gate charge and given voltages include 78 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 830w (tc). The product's input capacitance at maximum includes 5150 pf @ 25 v. It has a long 59 weeks standard lead time. The product hiperfet™, polar3™, is a highly preferred choice for users. to-247ad (ixfh) is the supplier device package value. The continuous current drain at 25°C is 42a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfh42, a base product number of the product. The product is designated with the ear99 code number.

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IXFH42N60P3, Polar3 HiperFET IXFH42N60P3 Power MOSFET, N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier(Technical Reference)
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IXFH42N60P3(Datasheets)

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FAQs

Yes. You can also search IXFH42N60P3 on website for other similar products.
We accept all major payment methods for all products including ET11280414. Please check your shopping cart at the time of order.
You can order IXYS brand products with IXFH42N60P3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFH42N60P3. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFH42N60P3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11280414 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11280414.
Yes. We ship IXFH42N60P3 Internationally to many countries around the world.