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STMicroelectronics STF12N65M2

STF12N65M2 STMicroelectronics
STF12N65M2
STF12N65M2
STMicroelectronics

Product Information

The STF12N65M2, STMicroelectronics, is a through-hole high-performance MOSFET designed to handle high-voltage applications. Its low on-resistance, robust durability, low price, versatility, and high efficiency make it a preferred product for users.

 

Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16.5 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Series:
MDmesh M2
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
16.4mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
500 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
500mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STF12N65M2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5244904
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
535 pF @ 100 V
standardLeadTime:
16 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™ M2
Supplier Device Package:
TO-220FP
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STF12
ECCN:
EAR99
RoHs Compliant
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STMicroelectronics is a leading semiconductor manufacturer known for its high-performance electronic components. One of their notable offerings in the power electronics domain is the STF12N65M2, an N-channel Power MOSFET. With a voltage rating of 650V, this MOSFET is designed to handle high-power applications efficiently and reliably. Its high voltage capability, low on-resistance, enhanced switching performance, and robust design provide engineers and system designers with a reliable and efficient solution for various power-based projects.

  • High-Voltage Capability: The STF12N65M2 MOSFET is designed explicitly for high-voltage handling applications. With a maximum drain-source voltage of 650V, it can withstand significant power levels without compromising performance or reliability. This makes it suitable for various power supply circuits, motor control systems, and industrial applications.
  • Low On-Resistance: The low on-resistance (RDS (on)) of the STF12N65M2 ensures minimal power losses and efficient operation. With an RDS (on) rating of typically 0.34Ω, this MOSFET offers low conduction losses, reducing energy wastage and allowing for higher power density designs. It enables increased power efficiency in applications, reducing system heating and enhancing overall performance.
  • Enhanced Switching Performance: The STF12N65M2 MOSFET excels in switching applications with fast and reliable performance. It features a low gate charge (Qg) and a low input capacitance (Ciss), enabling quick switching transitions. This attribute contributes to reduced switching losses, minimizing power dissipation and ensuring improved overall system efficiency.
  • Robust and Reliable: STMicroelectronics has a reputation for delivering high-quality semiconductor devices, and the STF12N65M2 is no exception. This MOSFET is built with advanced technology and manufacturing processes and offers excellent reliability and durability, even under demanding operating conditions. It provides a high level of robustness, ensuring long-term performance and extended product lifespan.

 

 

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STF12N65M2 N-channel 650 V 8 A MDmesh Power MOSFET(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
Mult Dev Wafer Site Add 3/Aug/2018(PCN Assembly/Origin)
pdf icon
STF12N65M2(Datasheets)

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11262914 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "STMicroelectronics" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11262914.
Yes. We ship STF12N65M2 Internationally to many countries around the world.