STMicroelectronics STP6N95K5
Product Information
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
90 W
Maximum Gate Source Voltage:
±30 V
Maximum Gate Threshold Voltage:
5V
Height:
15.75mm
Width:
4.6mm
Length:
10.4mm
Maximum Drain Source Resistance:
1.25 Ω
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
9 A
Minimum Gate Threshold Voltage:
3V
Forward Diode Voltage:
1.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
1.25Ohm @ 3A, 10V
edacadModel:
STP6N95K5 Models
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3043821
Package:
Tube
Drain to Source Voltage (Vdss):
950 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
450 pF @ 100 V
Mounting Type:
Through Hole
Series:
SuperMESH5™
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP6N95
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship STP6N95K5 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STP6N95K5. With a typical gate charge at Vgs includes 13 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 90 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 5v of maximum gate threshold voltage. In addition, the height is 15.75mm. Furthermore, the product is 4.6mm wide. Its accurate length is 10.4mm. It provides up to 1.25 ω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 9 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3v. Its forward diode voltage is 1.6v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 100µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 1.25ohm @ 3a, 10v. The maximum gate charge and given voltages include 13 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 950 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 90w (tc). The product's input capacitance at maximum includes 450 pf @ 100 v. The product supermesh5™, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 9a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stp6n95, a base product number of the product. The product is designated with the ear99 code number.
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