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Vishay Siliconix SI4477DY-T1-GE3

SI4477DY-T1-GE3 Vishay Siliconix
SI4477DY-T1-GE3
Vishay Siliconix

Product Information

Manufacturer Standard Lead Time:
19 Weeks
Detailed Description:
P-Channel 20V 26.6A (Tc) 3W (Ta), 6.6W (Tc) Surface Mount 8-SO
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
SI4477
Gate Charge (Qg) (Max) @ Vgs:
190nC @ 10V
Rds On (Max) @ Id, Vgs:
6.2mOhm @ 18A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
4600pF @ 10V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SO
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
26.6A (Tc)
Customer Reference:
Power Dissipation (Max):
3W (Ta), 6.6W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SI4477DY-T1-GE3. It has typical 19 weeks of manufacturer standard lead time. It features p-channel 20v 26.6a (tc) 3w (ta), 6.6w (tc) surface mount 8-so. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: si4477. The maximum gate charge and given voltages include 190nc @ 10v. It has a maximum Rds On and voltage of 6.2mohm @ 18a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 4600pf @ 10v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 8-so is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 26.6a (tc). The product carries maximum power dissipation 3w (ta), 6.6w (tc). This product use mosfet (metal oxide) technology.

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Multiple Fabracation Changes09/Jul/2014(PCN Assembly/Origin)
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SI4477DY(Datasheets)

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FAQs

Yes. You can also search SI4477DY-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET11213319. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SI4477DY-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SI4477DY-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SI4477DY-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11213319 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11213319.
Yes. We ship SI4477DY-T1-GE3 Internationally to many countries around the world.