STMicroelectronics STI260N6F6
Product Information
Category:
Power MOSFET
Dimensions:
10.4 x 4.6 x 10.75mm
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
I2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
183 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
11400 pF @ 25 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
144.4 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
DeepGate, STripFET
Maximum Gate Source Voltage:
±20 V
Height:
10.75mm
Typical Turn-On Delay Time:
31.4 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Rds On (Max) @ Id, Vgs:
3mOhm @ 60A, 10V
edacadModel:
STI260N6F6 Models
Gate Charge (Qg) (Max) @ Vgs:
183 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2674480
Package:
Tube
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
11400 pF @ 25 V
Mounting Type:
Through Hole
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
I2PAK
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STI260N
ECCN:
EAR99
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This is manufactured by STMicroelectronics. The manufacturer part number is STI260N6F6. It is of power mosfet category . The given dimensions of the product include 10.4 x 4.6 x 10.75mm. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of i2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 183 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 11400 pf @ 25 v . Its accurate length is 10.4mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 144.4 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product deepgate, stripfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 10.75mm. In addition, it has a typical 31.4 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. It has a maximum Rds On and voltage of 3mohm @ 60a, 10v. The maximum gate charge and given voltages include 183 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 75 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 300w (tc). The product's input capacitance at maximum includes 11400 pf @ 25 v. The product deepgate™, stripfet™ vi, is a highly preferred choice for users. i2pak is the supplier device package value. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sti260n, a base product number of the product. The product is designated with the ear99 code number.
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