STMicroelectronics STP7N52K3
Product Information
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
525 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
33 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
90 W
Series:
MDmesh K3, SuperMESH3
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.75mm
Maximum Drain Source Resistance:
850 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
980mOhm @ 3.1A, 10V
edacadModel:
STP7N52K3 Models
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2136054
Package:
Tube
Drain to Source Voltage (Vdss):
525 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
737 pF @ 100 V
Mounting Type:
Through Hole
Series:
SuperMESH3™
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP7N
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship STP7N52K3 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STP7N52K3. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 525 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 33 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 90 w maximum power dissipation. The product mdmesh k3, supermesh3, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.75mm. It provides up to 850 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 50µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 980mohm @ 3.1a, 10v. The maximum gate charge and given voltages include 34 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 525 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 90w (tc). The product's input capacitance at maximum includes 737 pf @ 100 v. The product supermesh3™, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 6a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stp7n, a base product number of the product. The product is designated with the ear99 code number.
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