Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.6V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.5 nC @ 4.5 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
STripFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.25mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
0.045 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
600mV @ 250µA (Min)
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
11.5 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STS6NF20V Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.95V, 4.5V
edacadModelUrl:
/en/models/2035604
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
460 pF @ 15 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
STripFET™ II
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STS6NF20
ECCN:
EAR99
