Vishay Siliconix SIS890DN-T1-GE3

SIS890DN-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs:
23.5mOhm @ 10A, 10V
title:
SIS890DN-T1-GE3
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH info available upon request
edacadModel:
SIS890DN-T1-GE3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/3309114
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.7W (Ta), 52W (Tc)
standardLeadTime:
28 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
802 pF @ 50 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
Supplier Device Package:
PowerPAK® 1212-8
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIS890
ECCN:
EAR99
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIS890DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8. It has a maximum Rds On and voltage of 23.5mohm @ 10a, 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. In addition, it is reach info available upon request. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.7w (ta), 52w (tc). It has a long 28 weeks standard lead time. The product's input capacitance at maximum includes 802 pf @ 50 v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 29 nc @ 10 v. powerpak® 1212-8 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 30a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sis890, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
New Solder Plating Site 18/Apr/2023(PCN Assembly/Origin)
pdf icon
SIS890DN(Datasheets)
pdf icon
Mult Dev 08/Dec/2022(PCN Design/Specification)

Reviews

  • Be the first to review.

FAQs

Yes. You can also search SIS890DN-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET11123941. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIS890DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIS890DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIS890DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11123941 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11123941.
Yes. We ship SIS890DN-T1-GE3 Internationally to many countries around the world.