Texas Instruments CSD16322Q5C
Product Information
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
1.4V
Package Type:
SON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.9V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.8 nC @ 4.5 V
Channel Type:
N
Length:
6.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.1 W
Series:
NexFET
Maximum Gate Source Voltage:
-8 V, +10 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.2 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
5mOhm @ 20A, 8V
edacadModel:
CSD16322Q5C Models
Gate Charge (Qg) (Max) @ Vgs:
9.7 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
3V, 8V
edacadModelUrl:
/en/models/2202560
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
+10V, -8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1365 pF @ 12.5 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-SON
Current - Continuous Drain (Id) @ 25°C:
21A (Ta), 97A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD1632
ECCN:
EAR99
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This is manufactured by Texas Instruments. The manufacturer part number is CSD16322Q5C. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.1mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The product carries 1.4v of maximum gate threshold voltage. The package is a sort of son. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.9v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6.8 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 3.1 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +10 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 7.2 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 5mohm @ 20a, 8v. The maximum gate charge and given voltages include 9.7 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 3v, 8v. It is shipped in tape & reel (tr) package . The product has a 25 v drain to source voltage. The maximum Vgs rate is +10v, -8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.1w (ta). The product's input capacitance at maximum includes 1365 pf @ 12.5 v. The product nexfet™, is a highly preferred choice for users. 8-son is the supplier device package value. The continuous current drain at 25°C is 21a (ta), 97a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd1632, a base product number of the product. The product is designated with the ear99 code number.
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