Category:
Power MOSFET
Dimensions:
10.4 x 9.35 x 4.6mm
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
375 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1100 pF @ 100 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
44 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
190 W
Series:
MDmesh K5, SuperMESH5
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.6mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
375mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STB15N80K5 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3770073
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
190W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 100 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
SuperMESH5™
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB15
ECCN:
EAR99
