STMicroelectronics STW69N65M5-4
Product Information
Maximum Continuous Drain Current:
58 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
710 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
143 nC @ 10 V
Channel Type:
N
Length:
15.9mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
330 W
Series:
MDmesh M5
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
21.1mm
Maximum Drain Source Resistance:
45 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
45mOhm @ 29A, 10V
Gate Charge (Qg) (Max) @ Vgs:
143 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STW69N65M5-4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4441196
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
330W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6420 pF @ 100 V
standardLeadTime:
18 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™ V
Supplier Device Package:
TO-247-4L
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW69
ECCN:
EAR99
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Yes. We ship STW69N65M5-4 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STW69N65M5-4. While 58 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.1mm wide. The product offers single transistor configuration. It has a maximum of 710 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 143 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.9mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 330 w maximum power dissipation. The product mdmesh m5, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 21.1mm. It provides up to 45 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 45mohm @ 29a, 10v. The maximum gate charge and given voltages include 143 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 330w (tc). The product's input capacitance at maximum includes 6420 pf @ 100 v. It has a long 18 weeks standard lead time. The product mdmesh™ v, is a highly preferred choice for users. to-247-4l is the supplier device package value. The continuous current drain at 25°C is 58a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw69, a base product number of the product. The product is designated with the ear99 code number.
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