Vishay Siliconix SI7137DP-T1-GE3

SI7137DP-T1-GE3 Vishay Siliconix
SI7137DP-T1-GE3
Vishay Siliconix

Product Information

Manufacturer Standard Lead Time:
47 Weeks
Detailed Description:
P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Base Part Number:
SI7137
Gate Charge (Qg) (Max) @ Vgs:
585nC @ 10V
Rds On (Max) @ Id, Vgs:
1.95mOhm @ 25A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
20000pF @ 10V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Customer Reference:
Power Dissipation (Max):
6.25W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SI7137DP-T1-GE3. It has typical 47 weeks of manufacturer standard lead time. It features p-channel 20v 60a (tc) 6.25w (ta), 104w (tc) surface mount powerpak® so-8. The typical Vgs (th) (max) of the product is 1.4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. Base Part Number: si7137. The maximum gate charge and given voltages include 585nc @ 10v. It has a maximum Rds On and voltage of 1.95mohm @ 25a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 20000pf @ 10v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® so-8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). The product carries maximum power dissipation 6.25w (ta), 104w (tc). This product use mosfet (metal oxide) technology.

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Multiple Devices 11/Dec/2015(PCN Assembly/Origin)
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SI7137DP(Datasheets)

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FAQs

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Yes. We ship SI7137DP-T1-GE3 Internationally to many countries around the world.