STMicroelectronics STB18NM60ND
Product Information
Maximum Continuous Drain Current:
13 A
Transistor Material:
Si
Width:
8.95mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
130 W
Series:
FDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
4.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
290 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
290mOhm @ 6.5A, 10V
edacadModel:
STB18NM60ND Models
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4250520
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1030 pF @ 50 V
Mounting Type:
Surface Mount
Series:
FDmesh™ II
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB18
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship STB18NM60ND Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STB18NM60ND. While 13 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 8.95mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 130 w maximum power dissipation. The product fdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 4.4mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 290 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 290mohm @ 6.5a, 10v. The maximum gate charge and given voltages include 34 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 110w (tc). The product's input capacitance at maximum includes 1030 pf @ 50 v. The product fdmesh™ ii, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 13a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb18, a base product number of the product. The product is designated with the ear99 code number.
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