Maximum Drain Source Voltage:
1200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
STB37N60
Channel Type:
N
Maximum Gate Threshold Voltage:
4.9V
Maximum Drain Source Resistance:
0.69 Ω
Package Type:
H2PAK-2
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
12 A
Transistor Material:
SiC
Pin Count:
3
Manufacturer Standard Lead Time:
38 Weeks
Detailed Description:
N-Channel 1200V 12A (Tc) 250W (Tc) Surface Mount H2Pak-2
Vgs(th) (Max) @ Id:
5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
STH12
Gate Charge (Qg) (Max) @ Vgs:
44.2nC @ 10V
Rds On (Max) @ Id, Vgs:
690mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1370pF @ 100V
Mounting Type:
Surface Mount
Series:
MDmesh™ K5
Supplier Device Package:
H2Pak-2
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Customer Reference:
Power Dissipation (Max):
250W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by STMicroelectronics. The manufacturer part number is STH12N120K5-2. It has a maximum of 1200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product stb37n60, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.9v of maximum gate threshold voltage. It provides up to 0.69 ω maximum drain source resistance. The package is a sort of h2pak-2. It consists of 1 elements per chip. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins. It has typical 38 weeks of manufacturer standard lead time. It features n-channel 1200v 12a (tc) 250w (tc) surface mount h2pak-2. The typical Vgs (th) (max) of the product is 5v @ 100µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: sth12. The maximum gate charge and given voltages include 44.2nc @ 10v. It has a maximum Rds On and voltage of 690mohm @ 6a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The stmicroelectronics's product offers user-desired applications. The product has a 1200v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1370pf @ 100v. The product mdmesh™ k5, is a highly preferred choice for users. h2pak-2 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 12a (tc). The product carries maximum power dissipation 250w (tc). This product use mosfet (metal oxide) technology.
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