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Toshiba Semiconductor and Storage TPW1R005PL,L1Q

TPW1R005PL-L1Q Toshiba Semiconductor and Storage TPW1R005PL,L1Q
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.4V @ 1mA
Operating Temperature:
175°C
Package / Case:
8-PowerWDFN
edacadModel:
TPW1R005PL,L1Q Models
Gate Charge (Qg) (Max) @ Vgs:
122 nC @ 10 V
RoHS Status:
RoHS Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/6188441
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
45 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
960mW (Ta), 170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
9600 pF @ 22.5 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
8-DSOP Advance
Current - Continuous Drain (Id) @ 25°C:
300A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPW1R005
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPW1R005PL,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.4v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in 8-powerwdfn. The maximum gate charge and given voltages include 122 nc @ 10 v. The product is rohs compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 45 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 960mw (ta), 170w (tc). The product's input capacitance at maximum includes 9600 pf @ 22.5 v. It has a long 52 weeks standard lead time. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. 8-dsop advance is the supplier device package value. The continuous current drain at 25°C is 300a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpw1r005, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

Yes. You can also search TPW1R005PL,L1Q on website for other similar products.
We accept all major payment methods for all products including ET11000253. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TPW1R005PL,L1Q directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TPW1R005PL,L1Q. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TPW1R005PL,L1Q.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11000253 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11000253.
Yes. We ship TPW1R005PL,L1Q Internationally to many countries around the world.