This is manufactured by STMicroelectronics. The manufacturer part number is SCT50N120. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries depletion channel mode. The product sct, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3v of maximum gate threshold voltage. It provides up to 0.59 ω maximum drain source resistance. The package is a sort of hip247. It consists of 1 elements per chip. While 65 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 69mohm @ 40a, 20v. The maximum gate charge and given voltages include 122 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 318w (tc). The product's input capacitance at maximum includes 1900 pf @ 400 v. It has a long 52 weeks standard lead time. hip247™ is the supplier device package value. The continuous current drain at 25°C is 65a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sct50, a base product number of the product. The product is designated with the ear99 code number.
Datasheet - SCT50N120(Technical Reference)
SCT50N120(Datasheets)
Fine Tune SIC MOSFET Gate Driver(Datasheets)
Standard outer labelling 15/Nov/2023(PCN Packaging)
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This is manufactured by STMicroelectronics. The manufacturer part number is SCT50N120. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries depletion channel mode. The product sct, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3v of maximum gate threshold voltage. It provides up to 0.59 ω maximum drain source resistance. The package is a sort of hip247. It consists of 1 elements per chip. While 65 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 69mohm @ 40a, 20v. The maximum gate charge and given voltages include 122 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 318w (tc). The product's input capacitance at maximum includes 1900 pf @ 400 v. It has a long 52 weeks standard lead time. hip247™ is the supplier device package value. The continuous current drain at 25°C is 65a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sct50, a base product number of the product. The product is designated with the ear99 code number.
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